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| Shantou Huashan Electronic Devices Co.,Ltd. HCP12C60 Silicon Controlled Rectifier Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=12A) * Low On-State Voltage (1.3V(Typ.)@ ITM) * Non-isolated Type General Description Standard gate triggering SCR is suitable for the application where requiring high bi-directional blocking voltage capability and also suitable for over voltage protection,motor control cicuit in power tool,inrush current limit circuit and heating control system. Absolute Maximum RatingsTa=25 unless otherwise specified T s t g ----Storage Temperature ------------------------------------------------------ -40~125 T j ----Operating Junction Temperature ---------------------------------------------- -40~125 VDRM ----Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V ITRMS----R.M.S On-State Current180 Conduction Angles---------------------------------------- 12A IT(AV) ----Average On-State Current (Half Sine Wave : TC = 109 C) ----------------------------------------7.6A ITSM ----Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) -------------------------- 132A I2t ----Circuit Fusing Considerations(t = 8.3ms) -----------------------------------------------------------87A2s 5W PGM ----Forward Peak Gate Power Dissipation (Ta=25) --------------------------------------------------- PG(AV) ----Forward Average Gate Power Dissipation (Ta=25,t=8.3ms) ---------------------------------0.5W IFGM ----Forward Peak Gate Current -------------------------------------------------------------------------------- 2A VRGM ----Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V Shantou Huashan Electronic Devices Co.,Ltd. HCP12C60 Electrical CharacteristicsTa=25 unless otherwise specified Symbol IDRM Items Repetitive Peak Off-State Current Peak On-State Voltage (1) Gate Trigger Current2 Gate Trigger Voltage (2) Non-Trigger Gate Voltage Holding Current Thermal Resistance Thermal Resistance Critical Rate of Rise Off-state Voltage 200 0.2 20 1.3 60 Min. Typ. Max. 10 200 1.6 15 1.5 Unit VAK=VDRM uA V mA V Conditions Tc=25 Tc=125 ITM=24A,tp=380s VAK =6V(DC), RL=10 ohm VAK =6V(DC), RL=10 ohm VTM IGT VGT VGD IH Rth(j-c) Rth(j-a) dv/dt Tc=25 V VAK =12V, RL=100 ohm Tc=125 IT=100mA,Gate open, mA Tc=25 /W /W V/s Junction to Case Junction to Ambient Linear slope up to VD=VDRM67% Gate open Tj=125 1. Forward current applied for 1 ms maximum duration,duty cycle 1%. 2. RGK current is not included in measurement Performance Curves FIGURE 1 - Gate Characteristics Max. Allowable Case Temperture (c) FIGURE 2 - Maximum CaseTemperture Gate Voltage (v) Gate Current (mA) Average On-State Current (mA) Shantou Huashan Electronic Devices Co.,Ltd. HCP12C60 FIGURE 4-Thermal Response FIGURE 3-Typical Forward Voltage(V) Transient Thermal Imperdance (c) On-State Voltage (V) FIGURE 5-Typical Gate Trigger Voltage VS Junction Temperature On-State Current(A) Time (sec) FIGURE 6-Typical Gate Trigger Current VS Junction Temperature Junction Temperature (C) FIGURE 7-Typical Holding Current Junction Temperature (C) FIGURE 8-Power Dissipation Max. Average Power Junction Temperature (C) Dissipation (W) Average On-State Current (A) |
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